Sökning: id:"swepub:oai:DiVA.org:liu-154710" >
Recombination proce...
Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity
-
- Eriksson, Martin O. (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT-Janzén
-
- Khromov, Sergey (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Center for III-Nitride Technology, C3NiT-Janzén
-
- Paskov, Plamen (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT-Janzén
-
visa fler...
-
- Wang, X. (författare)
- Peking Univ, Peoples R China
-
- Yoshikawa, A. (författare)
- Chiba Univ, Japan
-
- Holtz, Per-Olof (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Monemar, Bo (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT-Janzén
-
- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT-Janzén
-
visa färre...
-
(creator_code:org_t)
- AMER INST PHYSICS, 2019
- 2019
- Engelska.
-
Ingår i: AIP Advances. - : AMER INST PHYSICS. - 2158-3226. ; 9:1
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
https://aip.scitatio...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Obtaining high quality, wurtzite InN films with p-type conductivity is a challenge, and there is limited information about the photoluminescence (PL) characteristics of such films. In this study, we present a comprehensive PL study and discuss in detail the recombination processes in Mg-doped InN films with varying Mg concentrations. We find that at low Mg-doping of 1x10(18) cm(-3), which yields p-type conductivity, the PL in InN is spatially inhomogeneous. The latter is suggested to be associated with the presence of n-type pockets, displaying photoluminescence at 0.73 eV involving electrons at the Fermi edge above the conduction band edge. Increasing the Mg concentration to 2.9x10(19) cm(-3) in p-type InN yields strong and spatially uniform photoluminescence at 0.62 eV and 0.68 eV visible all the way to room temperature, indicating homogeneous p-type conductivity. An acceptor binding energy of 64 meV is determined for the Mg acceptor. Further increase of the Mg concentration to 1.8x10(20) cm(-3) leads to switching conductivity back to n-type. The PL spectra in this highly doped sample reveal only the emission related to the Mg acceptor (at 0.61 eV). In the low-energy tail of the emission, the multiple peaks observed at 0.54 - 0.58 eV are suggested to originate from recombination of carriers localized at stacking faults. (C) 2019 Author(s).
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas