Progress of Ultra-Wide Bandgap Ga < sub > 2 O < sub > 3 Semiconductor Materials in Power MOSFETs

• As a promising ultra-wide bandgap semiconductor, the <italic>& x03B2;</italic>-phase of Ga₂O₃ has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 & x00A0;eV), high theoretical breakdown electric field (8 MV & x002F;cm), and large Baliga & x0027;s figure of merit, which is deemed as a potential candidate for next generation high-power electronics, including diodes, field effect transistors (FETs), etc. In this article, we introduce the basic material properties of Ga₂O₃, and review the recent progress and advances of <italic>& x03B2;</italic>-Ga₂O₃ based metal & x2013;oxide & x2013;semiconductor field-effect transistors (<sc>mosfet</sc>s). Due to the problematic p-type doping technology up to now, the enhancement-mode (E-mode) <italic>& x03B2;</italic>-Ga₂O₃ FETs face more difficulties, compared with depletion mode (D-mode). This article focuses on reviewing the recent progress of E-mode Ga₂O₃ <sc>mosfet</sc>s, summarizing and comparing various feasible solutions when p-type doping is absent. Furthermore, the device fabrication and performances of state-of-art <italic>& x03B2;</italic>-Ga₂O₃ <sc>mosfet</sc>s, including D-mode, E-mode, and planar & x002F;vertical structure are fully discussed and compared, as well as potential solutions to the challenges of Ga₂O₃ FETs.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Crystals; Silicon carbide; Gallium nitride; Thermal conductivity; Photonic band gap; Epitaxial growth; Conductivity; Gallium oxide (Ga2O3); power metal-oxide-semiconductor field-effect transistor (mosfet); power semiconductor devices; ultra wide band-gap (UWBG) semiconductor

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