Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3

• Unintentionally doped n-type beta -Ga2O3 becomes highly resistive after annealing at high temperatures in oxygen ambient. The annealing process also induces an electron paramagnetic resonance (EPR) center, labeled IR1, with an electron spin of S=1/2 and principal g-values of g(xx)=2.0160, g(yy)=2.0386, and g(zz)=2.0029 with the principal axis of g(zz) being 60 degrees from the [001](*) direction and g(yy) along the b-axis. A hyperfine (hf) structure due to the hf interaction between the electron spin and nuclear spins of two equivalent Ga atoms with a hf splitting of similar to 29G (for Ga-69) has been observed. The center can also be created by electron irradiation. Comparing the Ga hf constants determined by EPR with corresponding values calculated for different Ga vacancy-related defects, the IR1 defect is assigned to the double negative charge state of either the isolated Ga vacancy at the tetrahedral site (V-Ga(I)(2-)) or the V-Ga(I)-Ga-ib-V-Ga(I) complex.

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NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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