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Molecular beam epit...
Molecular beam epitaxial growth of GaAs/GaNAsBi core-multishell nanowires
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- Okujima, Masahiro (author)
- Ehime Univ, Japan
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- Yoshikawa, Kohei (author)
- Ehime Univ, Japan
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- Mori, Shota (author)
- Ehime Univ, Japan
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- Yukimune, Mitsuki (author)
- Ehime Univ, Japan
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- Richards, Robert D. (author)
- Univ Sheffield, England
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- Zhang, Bin (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten
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- Chen, Weimin (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten
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- Buyanova, Irina (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten
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- Ishikawa, Fumitaro (author)
- Ehime Univ, Japan
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(creator_code:org_t)
- 2021-11-08
- 2021
- English.
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In: APPLIED PHYSICS EXPRESS. - : IOP Publishing Ltd. - 1882-0778 .- 1882-0786. ; 14:11
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.3...
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Abstract
Subject headings
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- GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Nanowire; Molecular Beam Epitaxy; Dilute Nitrides; Dilute Bismides; Telecommunication wavelength
Publication and Content Type
- ref (subject category)
- art (subject category)
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