Molecular beam epitaxial growth of GaAs/GaNAsBi core-multishell nanowires

• GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Nanowire; Molecular Beam Epitaxy; Dilute Nitrides; Dilute Bismides; Telecommunication wavelength

Publication and Content Type

ref (subject category)

art (subject category)