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Highly stretchable organic electrochemical transistors with strain-resistant performance

Chen, Jianhua (författare)
Yunnan Univ, Peoples R China; Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Southern Univ Sci & Technol SUSTech, Peoples R China; Southern Univ Sci & Technol SUSTech, Peoples R China
Huang, Wei (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China
Zheng, Ding (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
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Xie, Zhaoqian (författare)
Dalian Univ Technol, Peoples R China; City Univ Hong Kong, Peoples R China; Dalian Univ Technol, Peoples R China
Zhuang, Xinming (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China
Zhao, Dan (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China
Chen, Yao (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
Su, Ning (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
Chen, Hongming (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
Pankow, Robert M. (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
Gao, Zhan (författare)
City Univ Hong Kong, Peoples R China
Yu, Junsheng (författare)
Univ Elect Sci & Technol China UESTC, Peoples R China
Guo, Xugang (författare)
Southern Univ Sci & Technol SUSTech, Peoples R China; Southern Univ Sci & Technol SUSTech, Peoples R China
Cheng, Yuhua (författare)
Univ Elect Sci & Technol China UESTC, Peoples R China
Strzalka, Joseph (författare)
Argonne Natl Lab, IL 60439 USA
Yu, Xinge (författare)
City Univ Hong Kong, Peoples R China
Marks, Tobin J. (författare)
Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA
Facchetti, Antonio (författare)
Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten,Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Flexterra Inc, IL 60077 USA
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 (creator_code:org_t)
2022-05-02
2022
Engelska.
Ingår i: Nature Materials. - : NATURE PORTFOLIO. - 1476-1122 .- 1476-4660. ; 21, s. 564-571
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness. Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

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