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Effects of substrate rotation during AlSi-HiPIMS/Ti-DCMS co-sputtering growth of TiAlSiN coatings on phase content, microstructure, and mechanical properties

Hsu, Tun-Wei, 1991- (författare)
Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
Greczynski, Grzegorz, 1973- (författare)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Christensen, Bjarke Holl (författare)
Danish Technological Institute, Kongsvang Allé 29, DK-8000 Aarhus C, Denmark
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Almtoft, Klaus Pagh (författare)
Danish Technological Institute, Kongsvang Allé 29, DK-8000 Aarhus C, Denmark
Boyd, Robert, 1972- (författare)
Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
Kolozsvári, Szilárd (författare)
Plansee Composite Materials GmbH, Lechbruck am See DE-86983, Germany
Polcik, Peter (författare)
Plansee Composite Materials GmbH, Lechbruck am See DE-86983, Germany
Bolz, Stephan (författare)
CemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
Kölker, Werner (författare)
CemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
Schiffers, Christoph (författare)
CemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
Mesic, Biljana (författare)
CemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
Odén, Magnus, 1965- (författare)
Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
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 (creator_code:org_t)
Elsevier, 2023
2023
Engelska.
Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 453
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • A combined high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) technique is used to deposit Ti0.6Al0.32Si0.08N films with 1-fold substrate table rotation. Layers are grown at two different substrate-target separations, two different rotational speeds, and with different values of substrate bias. The aim is to study the role of (1) overlap between ion and neutral fluxes generated from HiPIMS and DCMS sources, respectively, and (2) the subplantation range of low-mass ions. Results from X-ray diffractometry highlight the necessity of flux intermixing in the formation of the metastable B1-structured TiAlSiN solid solutions. All films grown at short target-to-substrate distance contain the hexagonal AlN phase, as there is essentially no overlap between HiPIMS and DCMS fluxes, thus the Al+ and Si+ subplantation is very limited. Under conditions of high flux intermixing corresponding to larger target-to-substrate distance, no w-AlN forms irrespective of rotational speed (1 or 3 rpm) and bias amplitude (120 or 480 V), indicating that the role of Al+/Si+ and Ti flux overlap is crucial for the phase formation during film growth by HiPIMS/DCMS with substrate rotation. This conclusion is further supported by the fact that the reduction of the bilayer thickness with increasing the target-to-substrate distance (hence increasing flux overlap) is larger for films grown with higher amplitude of the substrate bias, indicative of more efficient Al+/Si+ subplantation into the c-TiN phase. Single-phase films with the hardness close to that of layers grown with stationary substrate table can be achieved, however, at the expense of higher compressive stress.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Thin films
TiAlSiN
Magnetron sputtering
HiPIMS
Al+ and Si+ irradiation
Substrate rotation

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