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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
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- Gribisch, Philipp (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Department of Electrical and Information Technology and NanoLund, Lund University, Lund, Sweden
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- Delgado Carrascon, Rosalia, 1987- (author)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT-Janzén, Linköping University, Linköping, Sweden
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- Darakchieva, Vanya, 1971- (author)
- Linköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,NanoLund and the Physics Department, Lund University, Lund, Sweden,Centre for III-nitride technology (C3NiT), Linköping University, Linköping, Sweden,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2023
- 2023
- English.
- In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 70:5, s. 2408-2414
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- μm -thick drift layer, a low ON-resistance below 0.05 mΩ⋅ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Fin field effect transistor (FinFET)
- gallium nitride (GaN)
- quasi-vertical
- silicon carbide (SiC)
- Fin field effect transistor (FinFET)
- gallium nitride (GaN)
- quasi-vertical
- silicon carbide (SiC)
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- ref (subject category)
- art (subject category)
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