Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation

• Oxidation of hexagonal SiC surfaces and SiO2/SiC interfaces were analyzed using photoemission and synchrotron radiation. The existence of carbon clusters or carbon-containing by-products and the existence of sub-oxides at the SiO2/SiC interface had a significant effect on MOS device characteristic. Si-terminated surfaces of hexagonal n-type SiC(0001) crystals were considered since they were found to be efficient for device applications. The results show that no carbon clusters or carbon-containing by-product could be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than 10 Å.

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