Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC

• The annealing behavior of the positively charged carbon vacancy in electron-irradiated 4H-SiC was studied. Electron paramagnetic resonance was used for the purpose of analysis. It was found that around 1000 °C, the EPR signal of the defect starts decreasing. Clear ligand hyperfine structure was also observed after annealing at 1350 °C. Results show that the EI6 center may be the positively charged carbon vacancy at the hexagonal lattice site of 4H-SiC.

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