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On the lattice para...
On the lattice parameters of GaN
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- Darakchieva, Vanya, 1971- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Monemar, Bo, 1942- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Usui, A. (författare)
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(creator_code:org_t)
- AIP Publishing, 2007
- 2007
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:3, s. 031911-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The lattice parameters of low-defect density, undoped bulk GaN fabricated by hydride vapor phase epitaxy (HVPE) on (0001) sapphire and subsequent substrate removal, are precisely determined using high-resolution x-ray diffraction. The obtained values, c=5.18523 Å and a=3.18926 Å, are compared with the lattice parameters of freestanding HVPE GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high-pressure technique and homoepitaxial GaN is made, and significant differences in the lattice parameters are found. The observed differences are discussed and a possible explanation is suggested. © 2007 American Institute of Physics.
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- NATURAL SCIENCES
- NATURVETENSKAP
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