DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate

• Optical spectra of a C-doped (1-101) GaN are investigated via time resolved photoluminescence spectroscopy. Samples with different C-doping levels were prepared by metalorganic vapour phase epitaxy using C2H2 as the doping precursor. A carbon related emission peak is identified at 375 nm which shows typical behaviours for a donor-acceptor-pair emission band. The acceptor level is estimated to be 190 meV which is at 43 meV shallower than that in an Mg doped GaN. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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