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Defect engineering ...
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
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- Lindstrom, J.L. (författare)
- Lindström, J.L., Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-22100 Lund, Sweden
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- Murin, L.I (författare)
- Institute of Solid State and Semiconductor Physics, BY-220072 Minsk, Belarus
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Hallberg, T. (författare)
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- Markevich, V.P. (författare)
- Institute of Solid State and Semiconductor Physics, BY-220072 Minsk, Belarus, Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom
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- Svensson, B.G. (författare)
- Solid State Electronics, Royal Institute of Technology, SE-16440 Kista, Sweden
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- Kleverman, Mats (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-22100 Lund, Sweden
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- Hermansson, J. (författare)
- Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-22100 Lund, Sweden
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Lindström, JL., Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-22100 Lund, Sweden Institute of Solid State and Semiconductor Physics, BY-220072 Minsk, Belarus (creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1-4, s. 121-125
- Relaterad länk:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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Abstract
Ämnesord
Stäng
- Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (16O,18O) and carbon (12C,13C) isotopes were investigated. The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot+room-temperature (RT)) irradiation. © 2002 Elsevier Science B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Carbon
- Defects
- Electron irradiation
- Oxygen
- Silicon
- NATURAL SCIENCES
- NATURVETENSKAP
- carbon
- defects
- electron irradiation
- silicon
- oxygen
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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