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High-resolution cor...
High-resolution core-level spectroscopy of Si(100)c(4 × 2) and some metal-induced Si(111)√3 × √3 surfaces
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- Uhrberg, Roger (författare)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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(creator_code:org_t)
- 2001-11-26
- 2001
- Engelska.
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 13:49, s. 11181-11193
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- High-resolution core-level spectroscopy has been applied to the Si(100)c(4 × 2) surface. A correct decomposition of the Si 2p spectrum of the clean surface is important for studies of adsorption of different species and the formation of various surface reconstructions. A very well-resolved Si 2p spectrum is presented for the Si(100)c(4 × 2) surface. The decomposition of this spectrum verifies the original decomposition scheme introduced by Landemark et al (Landemark E, Karlsson C J, Chao Y-C and Uhrberg R I G 1992 Phys. Rev. Lett. 69 1588). Core-level spectra of some metal-induced Si(111)√3 × √3 surfaces are also presented. A comparison is made between the √3 × √3 reconstructions formed on Si(111) by In, a group III atom, and by Sn, a group IV atom. Both the 4d core levels of the adatoms and the Si 2p core-level spectra are discussed. Different kinds of deviation from an ideal surface may introduce a significant broadening of the core-level spectra. The effect of additional Ag atoms is discussed in the case of the Ag/Si(111)√3 × √3 surface. By reducing the surplus of Ag atoms on this surface, a Si 2p spectrum with extremely narrow components has been obtained.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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