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Electrical properti...
Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature
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Wang, Z. (författare)
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- Kugler, Veronika Mozhdeh (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Helmersson, Ulf (författare)
- Linköpings universitet,Tekniska högskolan,Plasma och ytbeläggningsfysik
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- Konofaos, N. (författare)
- Applied Physics Laboratory, Department of Physics, University of Ioannina, 451 10 Ioannina, Greece
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- Evangelou, E.K. (författare)
- Applied Physics Laboratory, Department of Physics, University of Ioannina, 451 10 Ioannina, Greece
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- Nakao, S. (författare)
- Natl. Inst. Adv. Indust. Sci. T., Nagoya 462-8510, Japan
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- Jin, P. (författare)
- Natl. Inst. Adv. Indust. Sci. T., Nagoya 462-8510, Japan
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(creator_code:org_t)
- AIP Publishing, 2001
- 2001
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:10, s. 1513-1515
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Deposition of SrTiO3 (STO) thin films by radio-frequency magnetron sputtering in an ultrahigh vacuum system at a low substrate temperature (~200°C) was performed in order to produce high-quality STO/p-Si (100) interfaces and STO insulator layers with dielectric constants of high magnitude. The STO films were identified as polycrystalline by x-ray diffraction, and were approximated with a layered structure according to the best fitting results of raw data from both Rutherford backscattering spectroscopy and variable angle spectroscopic ellipsometry. Room-temperature current-voltage and capacitance-voltage (C-V) measurements on Al/STO/p-Si diodes clearly revealed metal-insulator-semiconductor behavior, and the STO/p-Si interface state densities were of the order of 1011 eV-1 cm-2. The dielectric constant of the STO film was 65, and the dielectric loss factor varied between 0.05 and 0.55 for a frequency range of 1 kHz-10 MHz. For a 387 nm thick STO film, the dielectric breakdown field was 0.31 MV cm-1, and the charge storage capacity was 2.1 µC cm-2. These results indicate that STO films are suitable for applications as insulator layers in dynamic random access memories or as cladding layers in electroluminescent devices. © 2001 American Institute of Physics.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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