Sökning: id:"swepub:oai:DiVA.org:liu-47284" >
New NO2 sensor base...
New NO2 sensor based on Au gate field effect devices
-
- Filippini, D. (författare)
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 8, D-72076 Tübingen, Germany
-
- Weiss, T. (författare)
- Weiß, T., Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 8, D-72076 Tübingen, Germany
-
- Aragon, R. (författare)
- Aragón, R., Laboratorio de Películas Delgadas, Facultad de Ingeniería, Universidad de Buenos Aires and Prinso-Conicet-Citefa, Paseo Colón 850 (1063), Capital Federal, Argentina
-
visa fler...
-
- Weimar, U. (författare)
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 8, D-72076 Tübingen, Germany, Division of Applied Physics, Department of Physics and Measurement Technology, Linkoping University, SE-581 83 Linkoping, Sweden
-
visa färre...
-
Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 8, D-72076 Tübingen, Germany Weiß, T, Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 8, D-72076 Tübingen, Germany (creator_code:org_t)
- 2001
- 2001
- Engelska.
-
Ingår i: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 78:1-3, s. 195-201
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- A new NO2 field effect gas sensor based on Au gates is demonstrated and the influence of gate morphology on sensor response is evaluated. A sensitization mechanism, for non-catalytic continuous gates, based on grain boundary diffusion is proposed. The sensors are fabricated as MOS (metal-oxide-semiconductor) capacitors with sputtered or thermal evaporated Au gates (at different substrate temperatures) with thickness between 75 and 960 nm. The devices' sensitivity, in the range of 15-200 ppm of NO2 in dry air, depends strongly on gate morphology, shorter response times and larger voltage shifts are correlated with smaller grain sizes. Scanning-electron-microscope (SEM) images show that the microstructure is very stable after 5 months of gas exposure at temperatures up to 200°C. The sensors are selective to NO2 (with NO, H2 and CO as interfering gases) and selectivity depends also on gate structure. © 2001 Elsevier Science B.V. All rights reserved.
Nyckelord
- Chemical gas sensor
- Field effect
- Gold gates
- Nitrogen dioxide
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas