Strain relaxation of low-temperature deposited epitaxial titanium-carbide films

• The lattice misfit strain and relaxation during growth of 60-950 angstroms epitaxial TiC carbide films deposited by co-evaporation of C60 and Ti on MgO(0 0 1) have been studied by reciprocal space mapping (RSM) and transmission electron microscopy (TEM). All the films exhibited a strained layer growth behavior with respect to the substrate. The strain e, ranged from 2.1% for the 60 angstroms film to 0.8% for the 950 angstroms film. Initial misfit strain relaxation was by slip on {1 1 0}<1 0 1¯> and {1 1 1}<1 0 1¯>. After dislocation rearrangement the films predominantly exhibited well-developed misfit dislocations of edge type with line direction <1 0 0> along the interface plane and Burgers vectors 1/2[1 0 1¯] inclined to the interface with MgO.

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