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Sublimation epitaxy...
Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates
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- Beshkova, Milena (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Grigorov, K. G. (författare)
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Zakhariev, Z. (författare)
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visa fler...
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Abrashev, M. (författare)
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Massi, M. (författare)
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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visa färre...
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(creator_code:org_t)
- 2007
- 2007
- Engelska.
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Ingår i: Journal of Optoelectronics and Advanced Materials. - 1454-4164 .- 1841-7132. ; 9:1, s. 213-216
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.
Nyckelord
- AlN
- sublimation epitaxy
- HRXRD
- RBS
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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