Search: id:"swepub:oai:DiVA.org:liu-48234" >
A 4H-SiC BJT with a...
A 4H-SiC BJT with an epitaxially regrown extrinsic base layer
-
- Danielsson, Erik (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Domeij, Martin (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Lee, Hyung-Seok (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
show more...
-
- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Östling, Mikael (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Schoner, A (author)
- Acreo AB
-
- Hallin, Christer (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi,Department of Physics and Measurement Technology, Linköping University
-
show less...
-
(creator_code:org_t)
- 2005
- 2005
- English.
-
In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 483, s. 905-908
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://urn.kb.se/re...
-
https://doi.org/10.4...
-
show less...
Abstract
Subject headings
Close
- 4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- bipolar junction transistor
- extrinsic base
- epitaxial regrowth
- TECHNOLOGY
- TEKNIKVETENSKAP
- Electronics
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database