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Vacancies in As-gro...
Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
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Dannefaer, S (författare)
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Avalos, V (författare)
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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visa fler...
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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visa färre...
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 173-176
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.
Nyckelord
- epilayer
- positron annihilation
- SiC
- vacancies
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)