Characteristics of Ni Schottky contacts on compensated 4H-SiC layers

• The electrical properties of Ni Schottky contacts to compensated 4H-SiC layers have been characterized by means of IN and C-V measurements and the key parameters have been determined. The measured barrier heights were between 0.90 eV and 2.90 eV depending on the conductivity type and the donor/acceptor concentration as well as the measurement techniques used. Inhomogeneties in IN characteristics of some rectifiers at lower forward-bias voltages have been observed. This may suggest enhanced trapping mechanism due to the nonuniform boron compensation of the epilayers.

Nyckelord

epilayer compensation

recombination

Schottky contacts

thermionic emission

TECHNOLOGY

TEKNIKVETENSKAP

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