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Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Zhang, J (author)
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- Storasta, Liutauras (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Materials Science Forum, Vols. 389-393. ; , s. 259-262
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related "green" emission at similar to 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process.
Keyword
- boron
- cathodoluminescence
- C-V
- DLTS
- sublimation epitaxy
- vertical hot-wall CVD
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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