Characterization of anisotropic step-bunching on as-grown SiC surfaces

• We report the presence of anisotropic step-bunching in SiC epitaxy on off-oriented substrates. This is an effect of step-flow growth. The anisotropic step-bunching is discussed in relation to the temperature dependence of lateral growth velocities and the interface roughness. The macrostep appearance is probably related to formation of morphologically stable faces with low surface free energy.

Keyword

anisotropy

lateral growth

step bunching

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)