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Defect distribution...
Defect distribution in a-plane GaN on Al2 O3
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- Tuomisto, F. (författare)
- Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland
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- Paskova, T. (författare)
- Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany
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- Kroger, R. (författare)
- Kröger, R., Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany
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- Figge, S. (författare)
- Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany
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- Hommel, D. (författare)
- Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany
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- Monemar, Bo (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Kersting, R. (författare)
- Tascon GmbH, D-48148 Münster, Germany
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(creator_code:org_t)
- AIP Publishing, 2007
- 2007
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:12
- Relaterad länk:
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https://aaltodoc.aal...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11-20] a direction on (1-102) r -plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation. © 2007 American Institute of Physics.
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