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Role of impurities ...
Role of impurities and dislocations for the unintentional n-type conductivity in InN
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Barradas, N P (författare)
- Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
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- Xie, Mengyao (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Lorenz, K (författare)
- Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
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- Alves, E (författare)
- Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
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- Schubert, M (författare)
- University Nebraska, Department Elect Engn, Lincoln, NE 68588 USA
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- Persson, Per (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Giuliani, Finn (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Munnik, F (författare)
- Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany
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- Hsiao, Ching-Lien (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Tu, L W (författare)
- Natl Sun Yat Sen University, Department Phys, Kaohsiung 80424, Taiwan Natl Sun Yat Sen University, Centre Nanosci and Nanotechnol, Kaohsiung 80424, Taiwan
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- Schaff, W J (författare)
- Cornell University, Department Elect and Comp Engn, Ithaca, NY 14853 USA
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(creator_code:org_t)
- Elsevier BV, 2009
- 2009
- Engelska.
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Ingår i: PHYSICA B-CONDENSED MATTER. - : Elsevier BV. - 0921-4526. ; 404:22, s. 4476-4481
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We present a study on the role of dislocations and impurities for the unintentional n-type conductivity in high-quality InN grown by molecular beam epitaxy. The dislocation densities and H profiles in films with free electron concentrations in the low 10(17) cm(-1) and mid 10(18) cm(-3) range are measured, and analyzed in a comparative manner. It is shown that dislocations alone could not account for the free electron behavior in the InN films. On the other hand, large concentrations of H sufficient to explain, but exceeding substantially, the observed free electron densities are found. Furthermore, enhanced concentrations of H are revealed at the film surfaces, resembling the free electron behavior with surface electron accumulation. The low-conductive film was found to contain C and it is suggested that C passivates the H donors or acts as an acceptor, producing compensated material in this case. Therefore, it is concluded that the unintentional impurities play an important role for the unintentional n-type conductivity in InN. We suggest a scenario of H incorporation in InN that may reconcile the previously reported observations for the different role of impurities and dislocations for the unintentional n-type conductivity in InN.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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Darakchieva, Van ...
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Barradas, N P
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Xie, Mengyao
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Lorenz, K
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Alves, E
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Schubert, M
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Persson, Per
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Giuliani, Finn
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Munnik, F
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Hsiao, Ching-Lie ...
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Tu, L W
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Schaff, W J
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Linköpings universitet