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Activation of defec...
Activation of defects in GaNP by post-growth hydrogen treatment
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- Dagnelund, Daniel, 1980- (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Wang, X. J. (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Tu, C. W. (författare)
- Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093, USA
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- Polimeni, A. (författare)
- INFM and Dipartimento di Fisica,Università di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
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- Capizzi, M. (författare)
- INFM and Dipartimento di Fisica,Università di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
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- Buyanova, I. A (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Chen, Weimin (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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visa färre...
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(creator_code:org_t)
- Engelska.
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Effect of post-growth hydrogen treatment on defects and their role in carrier recombination in molecular beam epitaxial GaNP alloys is examined by means of photoluminescence and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several different defects in carrier recombination by the hydrogen treatment. Among them, two defect complexes are identified to contain a Ga interstitial (Gai). None of the activated Gai complexes was previously observed in GaNP. Possible mechanisms for the hydrogen-induced defect activation are discussed.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
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