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X-ray diffraction d...
X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices
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- Kyutt, R N (författare)
- Ioffe Physico-Technical Institute of RAS, St. Petersburg
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- Shubina, T V (författare)
- Ioffe Physico-Technical Institute of RAS, St. Petersburg
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- Sorokin, S V (författare)
- Ioffe Physico-Technical Institute of RAS, St. Petersburg
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- Solnyshkov, DD (författare)
- RAS
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- Ivanov, S V (författare)
- Ioffe Physico-Technical Institute of RAS, St. Petersburg
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- Willander, Magnus (författare)
- Chalmers
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Ioffe Physico-Technical Institute of RAS, St Petersburg RAS (creator_code:org_t)
- Iop Publishing Ltd, 2003
- 2003
- Engelska.
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Ingår i: Journal of Physics D. - : Iop Publishing Ltd. - 0022-3727 .- 1361-6463. ; 36:10A, s. A166-A171
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Structural study of CdSe/BeTe superlattices (SLs) grown by molecular beam epitaxy on GaAs substrate was performed by using double and triple crystal x-ray diffractometry. The period of the studied structures was about 5 nm, while the thickness of thin CdSe insertions varied from 0.4 to 1.5 monolayer. It is shown that new Be-Se bonds arise at the BeTe-CdSe interfaces in addition to the Be-Se bonds expected at the CdSe-BeTe interfaces. From the analysis of the diffraction curves of 002-reflection the complex composition of interfaces and thin insertions has been determined and contribution of all types of bonds in each SL period calculated. The diffraction curves of 004-reflection were used for the specification of the fine structure of the interfaces.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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- ref (ämneskategori)
- art (ämneskategori)
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