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Post-growth process...
Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy
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- Jacob, AP (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Technology and Gothenburg University
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- Myrberg, T (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Technology and Gothenburg University
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- Nour, Omer (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Chalmers Univ Technol, Lab Phys Elect and Photon, Dept Phys and Engn Phys, Dept Microtechnol and Nanosci,MC2, S-41296 Gothenburg, Sweden; Univ Gothenburg, S-41296 Gothenburg, Sweden;
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- Willander, Magnus (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Technology and Gothenburg University
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- Kyutt, RN (författare)
- Russian Academy of Science
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(creator_code:org_t)
- American Vacuum Society; 1999, 2004
- 2004
- Engelska.
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society; 1999. - 1071-1023 .- 1520-8567. ; 22:2, s. 565-569
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://gup.ub.gu.se...
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Abstract
Ämnesord
Stäng
- The post-growth structural stability regarding relaxation and defect propagation in Cd0.83Zn0.17Te/Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well (QW) heterostructures grown on [001] oriented Cd0.88Zn0.12Te substrates at 300degreesC by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550degreesC for 3 It each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350degreesC for 3 h slight modification of the Cd0.83Zn0.17Te/Cd0.92Zn0.08Te barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post-growth temperature time cycle. At 450 degreesC, this effect is more pronounced and seen as the complete disappearance of thickness fringes. For higher post-growth thermal treatment at 550 degreesC for 3 h, a hi-fi relaxation level accompanied by Zn content reduction is observed. A reduction of the Zn content down to 0.11 fractional value in the thick Cd0.83Zn0.17Te barrier is attributed to Zn out diffusion and/or Zn precipitation. (C) 2004 American Vacuum Society.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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- ref (ämneskategori)
- art (ämneskategori)
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