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Effect of growth te...
Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures
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- Zhao, QX (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers University of Technology and Göteborg University
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- Wang, Shu Min, 1963 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
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- Wei, YQ (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
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- Sadeghi, Mahdad, 1964 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
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- Larsson, Anders, 1957 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
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- Willander, Magnus (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers University of Technology and Göteborg University
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(creator_code:org_t)
- American Institute of Physics, 2005
- 2005
- Engelska.
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 86:12
- Relaterad länk:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://gup.ub.gu.se...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 degrees C in comparison with a structure grown at 450 degrees C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 degrees C in the structure grown at 450 degrees C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 degrees C. (C) 2005 American Institute of Physics.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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