Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2

• Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

silicon quantum dot; atomic force microscope; current imaging; current density

TECHNOLOGY

TEKNIKVETENSKAP

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