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Optimization of a C...
Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
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- Leone, Stefano, 1978- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Henry, Anne (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Andersson, Sven (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- The Electrochemical Society, 2010
- 2010
- Engelska.
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 157:10, s. H969-H979
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Concentrated homoepitaxial growths of 4H–SiC was performed using a chloride-based chemical vapor deposition (CVD) process on different off-angle substrates (on-axis, 4 and 8° off-axis toward the [110] direction). A suitable combination of gas flow and process pressure is needed to produce the gas speed that yields an optimum cracking of the precursors and a uniform gas distribution for deposition over large areas. The use of low pressure and the addition of chlorinated precursors bring the added benefit of achieving higher growth rates. A systematic study of the gas speed's effect on the growth rate, uniformity, and morphology on the 4H–SiC epitaxial layers was performed. Growth rates in excess of 50 µm/h were achieved on 50 mm diameter wafers with excellent thickness uniformity (below 2% /mean without rotation of the substrate) and smooth morphology using only 1/10 of the typical gas carrier flow and process pressure demonstrating the feasibility of a concentrated chloride-based CVD process for 4H–SiC. Thermodynamic calculations showed that the improved thickness uniformity could be due to a more uniform gas phase composition of the silicon intermediates. The concentration of the SiCl2 intermediate increases by a factor of 8 at a reduced carrier flow, while all the other hydrogenated silicon intermediates decrease.
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- NATURAL SCIENCES
- NATURVETENSKAP
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