Bistable defects in low-energy electron irradiated n-type 4H-SiC

• Epitaxial n-type 4H-SiC layers were irradiated at room temperature by low-energy electrons. During the annihilation process of the irradiation induced defects EH I and EH3, three new bistable centers, labeled EB centers, were detected in the DLTS spectrum. The reconfigurations of the EB centers (I -andgt; II and II -andgt; I) take place at room temperature with a thermal reconfiguration energy of about 0.95 eV. The threshold energy for moving the Si atom from its site in the SiC crystal structure is higher than the applied irradiation energy; therefore, the EB centers are attributed to carbon related complex defects.

Nyckelord

crystal microstructure

vacancies

defects

radiation effects

semiconductors

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