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Chloride-Based CVD ...
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
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- Leone, Stefano (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Lin, Yuan-Chih (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Beyer, Franziska C. (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Andersson, Sven (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Pedersen, Henrik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Henry, Anne (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2011
- 2011
- English.
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In: <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>. - : Trans Tech Publications Inc.. ; , s. 59-62
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.
Keyword
- Chloride-Based CVD
- Epitaxial Growth
- High Growth Rate
- On-Axis
Publication and Content Type
- ref (subject category)
- kon (subject category)
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