SiC epitaxy growth using chloride-based CVD

• The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 mu m/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

Nyckelord

Silicon carbide

Chloride

Epitaxy

Doping

PL

DLTS

TECHNOLOGY

TEKNIKVETENSKAP

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