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Atomic and Electron...
Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1(1)over-bar02) Surfaces
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- Virojanadara, Chariya (författare)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Hetzel, M. (författare)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Johansson, Leif I. (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Choyke, Wolfgang J. (författare)
- Department of Physics and Astronomy, University of Pittsburgh, USA
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- Starke, Ulrich (författare)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
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(creator_code:org_t)
- Trans Tech Publications Inc. 2008
- 2008
- Engelska.
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2. - : Trans Tech Publications Inc.. ; , s. 291-296
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated usingscanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission(PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The(2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires withelectronic states confined to one dimension. For the c(2×2) phase STM indicates the presence ofadatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic modelfor this c(2×2) phase is proposed.
Nyckelord
- atomic structure
- electronic structure
- 4H-SiC(1 1 02)
- photoemission
- STM
- LEED
- one dimension
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)