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Controlled growth o...
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
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- Lundskog, Anders (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Hsu, Chih-Wei (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Nilsson, Daniel (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Karlsson, K Fredrik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Forsberg, Urban (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Holtz, Per-Olof (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- Engelska.
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 363, s. 287-293
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution have been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {1101} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the <1101> and [0001] -directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zeroadsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed.
Nyckelord
- A3. Hot wall epitaxy A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B1. Nitrides
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- art (ämneskategori)
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