Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

• Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

crystal defects

electron-hole recombination

gallium compounds

III-V semiconductors

magnetic resonance

molecular beam epitaxial growth

nanowires

photoluminescence

semiconductor growth

semiconductor quantum wires

silicon

time resolved spectra

wide band gap semiconductors

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