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Effect of Mg doping on the structural and free-charge carrier properties of InN

Xie, Mengyao (författare)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Sedrine, Ben (författare)
IST/ITN Instituto Superior Técnico, Universidade Técnica de Lisboa, Portugal
Hong, L. (författare)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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Monemar, Bo (författare)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Schöche, S. (författare)
Department of Electrical Engineering, Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A
Hofmann, T. (författare)
Department of Electrical Engeneering, University of Nebraska, Lincoln, Nebraska 68588
Schubert, M. (författare)
Department of Electrical Engeneering, University of Nebraska, Lincoln, Nebraska 68588
Wang, X (författare)
Graduate School of electrical and Electronics Engineering and InN-Project as a CREST program of JST, Chiba University, Japan
Yoshikawa, A. (författare)
Graduate School of electrical and Electronics Engineering and InN-Project as a CREST program of JST, Chiba University, Japan
Wang, K. (författare)
Research Organization of Science and Engineering, Ritsumeikan University, Japan
Araki, T. (författare)
Department of Photonics, Ritsumeikan University, Japan
Darakchieva, Vanya (författare)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Nanishi, Y. (författare)
Department of Photonics, Ritsumeikan University, Japan/WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea
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 (creator_code:org_t)
AIP Publishing, 2014
2014
Engelska.
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:16, s. 163504-
Relaterad länk:
https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
https://doi.org/10.1...
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  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • We study the structural and free-charge carrier properties of two sets of InN films grown by molecular beam epitaxy doped with different Mg concentrations from 1x1018 cm-3 to 3.9x1021 cm-3. We determine the effect of Mg doping on surface morphology, lattice parameters, structural characteristics and carrier properties. We show that infrared spectroscopic ellipsometry can be used to evidence successful p-type doping in InN, which is an important issue in InN. High resolution X-ray diffraction, combined with atomic force microscopy measurements reveals a drastic decrease in structural quality of the film for Mg concentrations above 1020 cm-3, accompanied with a significant increase in surface roughness. In addition, a decrease of the c-lattice parameter and an increase of the a-lattice parameter are found with increasing Mg concentration. Different contributions to the strain are discussed and it is suggested that the incorporation of Mg leads to a change of growth mode and generation of tensile growth strain. At high Mg concentrations zinc-blende InN inclusions appear which are suggested to originate from higher densities of stacking faults. Infrared spectroscopic ellipsometry analysis shows a reduced LPP-coupling, manifested as a characteristic dip in the IRSE data, and qualitatively different broadening behavior for Mg concentrations between 1.1x1018 cm−3 and 2.9x1019 cm−3 indicate the existence of a p-type conducting bulk InN layer for these Mg concentrations.

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