Evaluation of gas mixtures with high-temperature gas sensors based on silicon carbide

• Field-effect devices with a catalytic metal gate are operated as gas sensors over a large temperature range by the use of 6H-silicon carbide (bandgap 2.9 eV) instead of silicon (1.1 eV) as the semiconducting material. We have produced metal-silicon dioxide-silicon carbide (MOSiC) capacitors with platinum as the gate metal that can be operated above 800-degrees-C. The sensitivity of the Pt-MOSiC devices to hydrogen and hydrocarbons was tested in various oxygen atmospheres. The response to mixtures of hydrogen and saturated hydrocarbons indicated the existence of two different sensing mechanisms.

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