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Infrared to vacuum-...
Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
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- Schöche, S. (författare)
- University of Nebraska-Lincoln,USA
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- Hofmann, T. (författare)
- University of Nebraska-Lincoln, USA
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Sedrine, N. Ben (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Wang, X. (författare)
- Peking University, Peoples R China
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- Yoshikawa, A. (författare)
- Chiba University, Japan
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- Schubert, M. (författare)
- University of Nebraska-Lincoln, USA
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(creator_code:org_t)
- American Institute of Physics (AIP), 2013
- 2013
- Engelska.
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 113:1, s. 013502-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Infrared to vacuum-ultraviolet spectroscopic ellipsometry and far-infrared optical Hall-effect measurements are applied to conclude on successful p-type doping of InN films. A representative set of In-polar Mg-doped InN films with Mg concentrations ranging from 1.2 x 10(16) cm(-3) to 3.9 x 10(21) cm(-3) is investigated. The data are compared and discussed in dependence of the Mg concentration. Differences between n-type and p-type conducting samples are identified and explained. p-type conductivity in the Mg concentration range between 1.1 x 10(18) cm(-3) and 2.9 x 10(19) cm(-3) is indicated by the appearance of a dip structure in the infrared spectral region related to a loss in reflectivity of p-polarized light as a consequence of reduced LO phonon plasmon coupling, by vanishing free-charge carrier induced birefringence in the optical Hall-effect measurements, and by a sudden change in phonon-plasmon broadening behavior despite continuous change in the Mg concentration. By modeling the near-infrared-to-vacuum-ultraviolet ellipsometry data, information about layer thickness, electronic interband transitions, as well as surface roughness is extracted in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied for the infrared spectral range to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer. The optical Hall-effect best-match model parameters are consistent with those obtained from infrared ellipsometry analysis.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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