Sökning: id:"swepub:oai:DiVA.org:liu-89522" >
Optically detected ...
Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
-
- Dagnelund, Daniel (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
-
- Stehr, Jan E. (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
-
- Yu Egorov, A (författare)
- St Petersburg Academic University, Russia
-
visa fler...
-
- Chen, Weimin (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
-
- Buyanova, Irina (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
-
visa färre...
-
(creator_code:org_t)
- American Institute of Physics (AIP), 2013
- 2013
- Engelska.
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:2, s. 021910-
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
http://liu.diva-port...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Ga-i-D) is identified as a complex defect that has a Ga interstitial (Ga-i) atom residing inside a Ga tetrahedron as its core. A comparison of Ga-i-D with other Ga-i-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas