3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

• The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.

Nyckelord

3C-SiC(111)

CVD

Heteroepitaxy

Photoluminescence (PL)

X-Ray Diffraction (XRD)

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