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Polytype Inclusions...
Polytype Inclusions in Cubic Silicon Carbide
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- Vasiliauskas, Remigijus (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Malinovskis, Paulius (författare)
- Vilnius University, Lithuania
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- Mekys, Algirdas (författare)
- Vilnius University, Lithuania
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Storasta, Jurgis (författare)
- Vilnius University, Lithuania
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications, 2013
- 2013
- Engelska.
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Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications. - 9783037856246 ; , s. 335-338
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
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- In this paper, we review our research on 6H-SiC polytype inclusions in 3C-SiC layers, which were grown on nominally on-axis 6H-SiC substrates using sublimation epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of 1775 degrees C. The main reason for the polytype inclusions to appear is local supersaturation non-uniformities over the sample surface which appear due to the temperature gradient and spiral growth nature of 6H-SiC. On the 6H-SiC spirals with small steps supersaturation is smaller and 3C-SiC nucleation and growth is diminished. Due to surface free energy and surface diffusion differences, polytype inclusions appear differently when 3C-SiC is grown on the Si- and C-faces. The 6H-SiC inclusions as well as twin boundaries act as neutral scattering centers and lower charge carrier mobility
Nyckelord
- 3C-SiC; polytype inclusions; supersaturation; charge carrier mobility
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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