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Hopping Conduction ...
Hopping Conduction in Mn Ion-Implanted GaAs Nanowires
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- Paschoal Jr., Waldomiro (author)
- Lund University,Lunds universitet,Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Kumar, Sandeep (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Borschel, Christian (author)
- Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany
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- Wu, Phillip (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Canali, Carlo M. (author)
- Linnéuniversitetet,Institutionen för datavetenskap, fysik och matematik, DFM,Division of Physics, School of Computer Science, Physics and Mathematics, Linneaus University, 39233 Kalmar, Sweden
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- Ronning, Carsten (author)
- Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Pettersson, Håkan (author)
- Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS)
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(creator_code:org_t)
- 2012-08-17
- 2012
- English.
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In: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 12:9, s. 4838-4842
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Abstract
Subject headings
Close
- We report on temperature-dependent charge transport in heavily doped Mn+-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Keyword
- Mott hopping
- nanowires
- self-assembly
- ion-implantation
- GaMnAs
- spintronics
- Condensed Matter Physics
- Kondenserade materians fysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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