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Strong compensation...
Strong compensation of n-type Ge via formation of donor-vacancy complexes
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- Coutinho, J. (författare)
- Department of Physics, I3N, University of Aveiro, Campus Santiago
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- Janke, C. (författare)
- School of Physics, University of Exeter
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- Carvalho, A. (författare)
- School of Physics, University of Exeter
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- Torres, V.J.B. (författare)
- Department of Physics, I3N, University of Aveiro, Campus Santiago
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Jones, R. (författare)
- School of Physics, University of Exeter
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- Briddon, P.R. (författare)
- School of Natural Science, University of Newcastle upon Tyne
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(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- Engelska.
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 401-402, s. 179-183
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Vacancies and interstitials in semiconductors play a fundamental role in both high-temperature diffusion and low-temperature radiation and implantation damage. In Ge, a serious contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity migration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density functional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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- art (ämneskategori)
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