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Early stage donor-v...
Early stage donor-vacancy clusters in germanium
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- Coutinho, Jose (författare)
- University of Aveiro
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- Torres, Vitor J. B. (författare)
- University of Aveiro
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Carvalho, Alexandra (författare)
- University of Exeter
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- Janke, Colin (författare)
- University of Exeter
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- Jones, Robert (författare)
- University of Exeter
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- Briddon, Patrick R. (författare)
- University of Newcastle Upon Tyne
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(creator_code:org_t)
- 2006-12-07
- 2007
- Engelska.
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 18:7, s. 769-773
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sb n V m with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n→ p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, Sb n V m defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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- art (ämneskategori)
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