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Calculation of deep...
Calculation of deep carrier traps in a divacancy in germanium crystals
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- Coutinho, J. (författare)
- Department of Physics, University of Aveiro , Campus Santiago, 3810-193 Aveiro, Portugal
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- Torres, V. J. B. (författare)
- Department of Physics, University of Aveiro , Campus Santiago, 3810-193 Aveiro, Portugal
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- Jones, R. (författare)
- School of Physics, University of Exeter , Exeter EX4 4QL, United Kingdom
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- Carvalho, A. (författare)
- School of Physics, University of Exeter , Exeter EX4 4QL, United Kingdom
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P.R. (författare)
- School of Natural Sciences, University of Newcastle upon Tyne , Newcastle upon Tyne, NE1 7RU, United Kingdom
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:9, s. 91919-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap does not differ radically in both materials. We propose a V2 model that is responsible for a donor level at Ev+0.03 eV, a first acceptor state at Ev+0.3 eV, and a second acceptor level at Ec-0.4 eV. The latter is only 0.1 eV deeper than an electron trap that has been recently linked to a divacancy in proton implanted material.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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