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Performance and spa...
Performance and spatial sensitivity variations of single photon avalanche diodes manufactured in an image sensor CMOS process
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- Borg, Johan (författare)
- Luleå tekniska universitet,EISLAB
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(creator_code:org_t)
- 2015
- 2015
- Engelska.
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 36:11, s. 1118-1120
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this letter we present the results from a series of single-photon avalanche diode (SPAD) structures implemented in a commercial 0.18 μm CMOS process intended for CMOS image sensors. Variations without effect on the performance and variations that produced non-functional devices are described. Devices based on the P+/NWELL and deep-NWELL/P-EPI SPADs junctions were found to work well in this process. When biased for 10% QE the best 10 μm diameter P+/NWELL SPADs exhibited a DCR of about 1 kHz, whereas the DCR of the deep-NWELL/P-EPI SPADs was only 10 Hz under the same conditions. We also show that the former type exhibited local sensitivity variations within the SPADs ranging from a factor 4 at low excess voltage to 1.2 at an excess voltage of about 0.5 V. No significant sensitivity variations were found for the deep- NWELL/P-EPI SPADs, but they were found to exhibit significant sensitivity outside the central junction, contributing from 8.3 % at low excess voltage to approximately 70% at high excess voltage
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Industrial Electronics
- Industriell elektronik
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