Simulation and measurement of short infrared pulses on silicon position sensitive device

• Lateral position sensitive devices (PSD) are important for triangulation, alignment and surface measurements as well as for angle measurements. Large PSDs show a delay on rising and falling edges when irradiated with near infra-red light [1]. This delay is also dependent on the spot position relative to the electrodes. It is however desirable in most applications to have a fast response. We investigated the responsiveness of a Sitek PSD in a mixed mode simulation of a two dimensional full sized detector. For simulation and measurement purposes focused light pulses with awavelength of 850 nm, duration of 1 µs and spot size of 280 µm were used. The cause for the slopes of rise and fall time is due to time constants of the device capacitance as well as the photo- generation mechanism itself [1]. To support the simulated results, we conducted measurements of rise and fall times on a physical device. Additionally, we quantified the homogeneity of the device by repositioning a spot of light from a pulsed ir-laser diode on the surface area.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Solid state detectors; Detector modelling and simulations II (electric fields

charge

transport

multiplication and induction

pulse formation

electron emission

etc); Photon detectors for UV

visible and IR photons (solid-state)

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)