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Contacts to Monocry...
Contacts to Monocrystalline N- and P-type Silicon by Wafer Bonding Using
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- Thungström, Göran (författare)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Fröjdh, Christer (författare)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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Svedberg, P. (författare)
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- Petersson, Sture (författare)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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(creator_code:org_t)
- 1994
- 1994
- Engelska.
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Ingår i: Physica scripta. T. - 0281-1847. ; T54, s. 77-80
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Contacts to monocrystalline silicon have been prepared by wafer bonding using cobalt disilicide as an interfacial layer. Bonding has been carried out with three different structures: n+ -CoSi2-n+, p+ -CoSi2-p+ and p+ -CoSi2-n+. The intermediate cobalt disilicide layers had a thickness of either 700 Å or 5250 Å. The bonding interface was characterized by electrical measurement (IV) and Secondary-ion mass spectrometry (SIMS) of the formed contacts. The n+ -CoSi2-n+ and p+ -CoSi2-p+ bondings display an ohmic behaviour. The resistance of the bonded structures was in the range expected for the bulk silicon used (0.1-0.05 Ω cm). The p+ -CoSi2-n+ structures shows a non ohmic behaviour. An evaluation of the SIMS profiles reveals that the non-linear behaviour of the p+ -CoSi2-interface is due to phosphorous diffusion from the n-doped region across the silicide to the p-doped area. It is shown that the phosphorous compensates the boron dopant.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Wafer bonding ohmic contacts cobalt silicide
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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