Contacts to Monocrystalline N- and P-type Silicon by Wafer Bonding Using

• Contacts to monocrystalline silicon have been prepared by wafer bonding using cobalt disilicide as an interfacial layer. Bonding has been carried out with three different structures: n+ -CoSi2-n+, p+ -CoSi2-p+ and p+ -CoSi2-n+. The intermediate cobalt disilicide layers had a thickness of either 700 Å or 5250 Å. The bonding interface was characterized by electrical measurement (IV) and Secondary-ion mass spectrometry (SIMS) of the formed contacts. The n+ -CoSi2-n+ and p+ -CoSi2-p+ bondings display an ohmic behaviour. The resistance of the bonded structures was in the range expected for the bulk silicon used (0.1-0.05 Ω cm). The p+ -CoSi2-n+ structures shows a non ohmic behaviour. An evaluation of the SIMS profiles reveals that the non-linear behaviour of the p+ -CoSi2-interface is due to phosphorous diffusion from the n-doped region across the silicide to the p-doped area. It is shown that the phosphorous compensates the boron dopant.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Wafer bonding ohmic contacts cobalt silicide

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

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ref (ämneskategori)

art (ämneskategori)