Processing of silicon UV-photodetectors

• UV-enhanced photodetectors of both n+-p and p+-n type have been processed in silicon. Photodetectors of the p+-n type display a responsivity close to the theoretical limit with an antireflective coating of either thermally grown dry silicon dioxide or deposited oxide (TEOS), followed by a short wet oxidizing step. This holds, irrespective of whether the detector window is doped by boron through ion implantation or diffusion from a solid source. However, for p+-n photodiodes with a TEOS-oxide in the as-deposited state the responsivity decreases substantially for wavelenghts below 500 nm compared to the theoretical predictions. This is attributed to a high recombination velocity at the silicon dioxide/silicon interface, as supported by computer simulations of the detector performance. In contrast, n+-p photodiodes are found to be rather insensitive with respect to the properties of the silicon dioxide/silicon interface. These results provide the first experimental demonstration that high built in electric fields, caused by abrupt dopant profiles, can suppress the influence of a high interface carrier recombination velocity.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

ultra violet detectors processing

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)